N TYPE GE SECRETS

≤ 0.fifteen) is epitaxially grown with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and then the construction is cycled by means of oxidizing and annealing levels. Due to preferential oxidation of Si around Ge [sixty eight], the first Si1–Germanium is often Employed in detectors in many different fields, In line with a an